HGT1S10N120BNS
Fairchild Semiconductor
型号:
HGT1S10N120BNS
封装:
TO-263AB
批次:
-
数据手册:
-
描述:
IGBT, 35A, 1200V, N-CHANNEL, TO-
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Fairchild Semiconductor |
| Series | - |
| Package | Bulk |
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 100 nC |
| Power - Max | 298 W |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Base Product Number | HGT1S10 |
| Td (on/off) @ 25°C | 23ns/165ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-263AB |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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