GT50JR21(STA1,E,S)
Toshiba Semiconductor and Storage
型号:
GT50JR21(STA1,E,S)
封装:
TO-3P(N)
批次:
-
数据手册:
-
描述:
PB-F IGBT / TRANSISTOR TO-3PN(OS
购买数量:
库存 : 23
最小起订量: 1 最小递增量: 1
数量
单价
1
4.465
10
3.7487
100
3.03278
500
2.695815
1000
2.308291
2000
2.173496
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 230 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Test Condition | - |
| Switching Energy | - |
| Td (on/off) @ 25°C | - |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-3P(N) |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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