GT40WR21,Q
Toshiba Semiconductor and Storage
型号:
GT40WR21,Q
封装:
TO-3P(N)
批次:
-
数据手册:
-
描述:
DISCRETE IGBT TRANSISTOR TO-3PN(
购买数量:
库存 : 100
最小起订量: 1 最小递增量: 1
数量
单价
1
10.2695
10
8.79795
25
8.1947
100
7.332005
300
6.900734
500
6.469424
1000
5.822484
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tray |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 375 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Test Condition | - |
| Switching Energy | - |
| Td (on/off) @ 25°C | - |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-3P(N) |
| Vce(on) (Max) @ Vge, Ic | 5.9V @ 15V, 40A |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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