GT40QR21(STA1,E,D
Toshiba Semiconductor and Storage
型号:
GT40QR21(STA1,E,D
封装:
TO-3P(N)
批次:
-
数据手册:
-
描述:
DISCRETE IGBT TRANSISTOR TO-3PN(
购买数量:
库存 : 18
最小起订量: 1 最小递增量: 1
数量
单价
1
3.3725
10
2.8329
100
2.291875
500
2.037218
1000
1.744362
2000
1.642502
5000
1.575812
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 230 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Test Condition | 280V, 40A, 10Ohm, 20V |
| Switching Energy | -, 290µJ (off) |
| Base Product Number | GT40QR21 |
| Td (on/off) @ 25°C | - |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-3P(N) |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Reverse Recovery Time (trr) | 600 ns |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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