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GT30J65MRB,S1E

Toshiba Semiconductor and Storage

型号:

GT30J65MRB,S1E

封装:

TO-3P(N)

批次:

-

数据手册:

-

描述:

650V SILICON N-CHANNEL IGBT, TO-

购买数量:

库存 : 61

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.4035

  • 10

    1.99785

  • 100

    1.590395

  • 500

    1.345694

  • 1000

    1.141805

  • 2000

    1.08472

  • 5000

    1.043936

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Gate Charge 70 nC
Power - Max 200 W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Test Condition 400V, 15A, 56Ohm, 15V
Switching Energy 1.4mJ (on), 220µJ (off)
Base Product Number GT30J65
Td (on/off) @ 25°C 75ns/400ns
Operating Temperature 175°C (TJ)
Supplier Device Package TO-3P(N)
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Reverse Recovery Time (trr) 200 ns
Current - Collector (Ic) (Max) 60 A
Voltage - Collector Emitter Breakdown (Max) 650 V