GT30J121(Q)
Toshiba Semiconductor and Storage
型号:
GT30J121(Q)
封装:
TO-3P(N)
批次:
-
数据手册:
-
描述:
IGBT 600V 30A 170W TO3PN
购买数量:
库存 : 89
最小起订量: 1 最小递增量: 1
数量
单价
1
3.1065
10
2.78635
25
2.63378
100
2.28266
300
2.165592
500
1.943187
1000
1.638826
2400
1.556888
4900
1.498359
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 170 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Test Condition | 300V, 30A, 24Ohm, 15V |
| Switching Energy | 1mJ (on), 800µJ (off) |
| Base Product Number | GT30J121 |
| Td (on/off) @ 25°C | 90ns/300ns |
| Supplier Device Package | TO-3P(N) |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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