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GT20J341,S4X(S

Toshiba Semiconductor and Storage

型号:

GT20J341,S4X(S

封装:

TO-220SIS

批次:

-

数据手册:

-

描述:

DISCRETE IGBT TRANSISTOR TO-220S

购买数量:

库存 : 6

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.919

  • 10

    1.59125

  • 100

    1.26673

  • 500

    1.071809

  • 1000

    0.909416

  • 2000

    0.863949

  • 5000

    0.831468

  • 10000

    0.803938

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Power - Max 45 W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Test Condition 300V, 20A, 33Ohm, 15V
Switching Energy 500µJ (on), 400µJ (off)
Td (on/off) @ 25°C 60ns/240ns
Operating Temperature 150°C (TJ)
Supplier Device Package TO-220SIS
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Reverse Recovery Time (trr) 90 ns
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 80 A
Voltage - Collector Emitter Breakdown (Max) 600 V