GT15J341,S4X
Toshiba Semiconductor and Storage
型号:
GT15J341,S4X
封装:
TO-220SIS
批次:
-
数据手册:
-
描述:
PB-F DISCRETE IGBT TRANSISTOR TO
购买数量:
库存 : 50
最小起订量: 1 最小递增量: 1
数量
单价
1
1.691
10
1.40125
100
1.11511
500
0.943578
1000
0.800603
2000
0.76058
5000
0.731984
10000
0.70775
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 30 W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Test Condition | 300V, 15A, 33Ohm, 15V |
| Switching Energy | 300µJ (on), 300µJ (off) |
| Td (on/off) @ 25°C | 60ns/170ns |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-220SIS |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
| Reverse Recovery Time (trr) | 80 ns |
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
2000+日均询价数量
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15,000 ㎡库存仓库
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