GT105N10T
Goford Semiconductor
型号:
GT105N10T
封装:
TO-220
批次:
-
数据手册:
-
描述:
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
购买数量:
库存 : 220
最小起订量: 1 最小递增量: 1
数量
单价
1
1.235
10
1.0108
100
0.78584
500
0.666083
1000
0.542602
2000
0.510796
5000
0.486466
10000
0.464018
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 35A, 10V |
| Power Dissipation (Max) | 74W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
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