GT100N12K
Goford Semiconductor
型号:
GT100N12K
封装:
TO-252
批次:
-
数据手册:
描述:
N120V,65A,RD<12M@10V,VTH2.5V~3.5
购买数量:
库存 : 2500
最小起订量: 1 最小递增量: 1
数量
单价
1
1.52
10
1.2407
100
0.964725
500
0.817741
1000
0.66614
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 35A, 10V |
| Power Dissipation (Max) | 75W (Tc) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2911 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
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