Goford Semiconductor
型号:
GT1003D
封装:
SOT-23-3L
批次:
-
数据手册:
-
描述:
N100V,RD(MAX)<130M@10V,RD(MAX)<1
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.4275
10
0.2983
100
0.150765
500
0.123025
1000
0.091276
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| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Power Dissipation (Max) | 2W |
| Supplier Device Package | SOT-23-3L |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 212 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C | 3A |