GT045N10M

Goford Semiconductor

型号:

GT045N10M

品牌:

封装:

TO-263

批次:

数据手册:

描述:

N100V, 120A,RD<4.5M@10V,VTH2V~4V

购买数量:

库存 : 754

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V
Power Dissipation (Max)	180W (Tc)
Supplier Device Package	TO-263
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	4198 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)