GT013N04TI
Goford Semiconductor
型号:
GT013N04TI
封装:
TO-220
批次:
-
数据手册:
-
描述:
N40V, 220A,RD<2.5M@10V,VTH2.0V~5
购买数量:
库存 : 76
最小起订量: 1 最小递增量: 1
数量
单价
1
1.406
10
1.15045
100
0.894995
500
0.758651
1000
0.618004
2000
0.58178
5000
0.554068
10000
0.528504
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 30A, 10V |
| Power Dissipation (Max) | 90W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3986 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
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