GE17080CDA3
GE Aerospace
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产品信息
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| Mfr | GE Aerospace |
| Series | SiC Power |
| Package | Bulk |
| Technology | Silicon Carbide (SiC) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 2350W |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Base Product Number | GE17080 |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| Rds On (Max) @ Id, Vgs | 2.23mOhm @ 765A, 20V |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | 2414nC @ 18V |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 58000pF @ 900V |
| Current - Continuous Drain (Id) @ 25°C | 765A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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