GB02SHT06-46
GeneSiC Semiconductor
型号:
GB02SHT06-46
封装:
TO-46
批次:
-
数据手册:
描述:
DIODE SIL CARBIDE 600V 4A TO46
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | GeneSiC Semiconductor |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Product Status | Active |
| Base Product Number | GB02SHT06 |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Supplier Device Package | TO-46 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 4A |
| Operating Temperature - Junction | -55°C ~ 225°C |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 1 A |
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