GA20JT12-263

GeneSiC Semiconductor

型号:

GA20JT12-263

封装:

TO-263-7

批次:

-

数据手册:

描述:

TRANS SJT 1200V 45A D2PAK

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr GeneSiC Semiconductor
Series -
Package Tube
FET Type -
Vgs (Max) -
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product Status Obsolete
Vgs(th) (Max) @ Id -
Base Product Number GA20JT12
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 60mOhm @ 20A
Power Dissipation (Max) 282W (Tc)
Supplier Device Package TO-263-7
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 3091 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 45A (Tc)