GA10JT12-263
GeneSiC Semiconductor
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产品信息
参数信息
用户指南
| Mfr | GeneSiC Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | - |
| Vgs (Max) | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | - |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | - |
| Base Product Number | GA10JT12 |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 10A |
| Power Dissipation (Max) | 170W (Tc) |
| Supplier Device Package | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1403 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
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