G3S06504C
Global Power Technology-GPT
型号:
G3S06504C
封装:
TO-252
批次:
-
数据手册:
描述:
DIODE SIL CARB 650V 11.5A TO252
购买数量:
库存 : 30
最小起订量: 1 最小递增量: 1
数量
单价
1
2.869
10
2.41205
100
1.951585
500
1.734776
1000
1.485401
2000
1.398666
5000
1.341875
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产品信息
参数信息
用户指南
| Mfr | Global Power Technology-GPT |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Supplier Device Package | TO-252 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 11.5A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
2000+日均询价数量
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15,000 ㎡库存仓库
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