FGL35N120FTDTU
Fairchild Semiconductor
型号:
FGL35N120FTDTU
封装:
HPM F2
批次:
-
数据手册:
-
描述:
INSULATED GATE BIPOLAR TRANSISTO
购买数量:
库存 : 15610
最小起订量: 1 最小递增量: 1
数量
单价
50
5.757
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Fairchild Semiconductor |
| Series | - |
| Package | Bulk |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 210 nC |
| Power - Max | 368 W |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Product Status | Active |
| Test Condition | 600V, 35A, 10Ohm, 15V |
| Switching Energy | 2.5mJ (on), 1.7mJ (off) |
| Td (on/off) @ 25°C | 34ns/172ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | HPM F2 |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 35A |
| Reverse Recovery Time (trr) | 337 ns |
| Current - Collector (Ic) (Max) | 70 A |
| Current - Collector Pulsed (Icm) | 105 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
