FF6MR12W2M1HPB11BPSA1
Infineon Technologies
型号:
FF6MR12W2M1HPB11BPSA1
封装:
Module
批次:
-
数据手册:
-
描述:
LOW POWER EASY
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tray |
| Technology | Silicon Carbide (SiC) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | - |
| Configuration | 2 N-Channel |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.55V @ 80mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.63mOhm @ 200A, 15V |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V |
| Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
2000+日均询价数量
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15,000 ㎡库存仓库
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