Infineon Technologies
型号:
FF23MR12W1M1B11BOMA1
封装:
Module
批次:
-
数据手册:
-
描述:
MOSFET 2 N-CH 1200V 50A MODULE
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
93.233
24
85.113664
48
81.204024
96
76.993348
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| Mfr | Infineon Technologies |
| Series | CoolSiC™+ |
| Package | Tray |
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Power - Max | - |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA |
| Base Product Number | FF23MR12 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 50A |