首页 / FET、MOSFET 阵列 / FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1

Infineon Technologies

型号:

FF23MR12W1M1B11BOMA1

封装:

Module

批次:

-

数据手册:

-

描述:

MOSFET 2 N-CH 1200V 50A MODULE

购买数量:

库存 : 281

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    93.233

  • 24

    85.113664

  • 48

    81.204024

  • 96

    76.993348

请发送询价,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series CoolSiC™+
Package Tray
Technology Silicon Carbide (SiC)
FET Feature -
Power - Max -
Configuration 2 N-Channel (Dual)
Mounting Type Chassis Mount
Package / Case Module
Product Status Obsolete
Vgs(th) (Max) @ Id 5.55V @ 20mA
Base Product Number FF23MR12
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 23mOhm @ 50A, 15V
Supplier Device Package Module
Gate Charge (Qg) (Max) @ Vgs 125nC @ 15V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 800V
Current - Continuous Drain (Id) @ 25°C 50A