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FF11MR12W1M1B11BOMA1

Infineon Technologies

型号:

FF11MR12W1M1B11BOMA1

封装:

Module

批次:

-

数据手册:

-

描述:

MOSFET 2N-CH 1200V 100A MODULE

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series CoolSiC™+
Package Tray
Technology Silicon Carbide (SiC)
FET Feature -
Power - Max -
Configuration 2 N-Channel (Dual)
Mounting Type Chassis Mount
Package / Case Module
Product Status Obsolete
Vgs(th) (Max) @ Id 5.55V @ 40mA
Base Product Number FF11MR12
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 15V
Supplier Device Package Module
Gate Charge (Qg) (Max) @ Vgs 250nC @ 15V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 7950pF @ 800V
Current - Continuous Drain (Id) @ 25°C 100A