FESB16ATHE3_A/I
Vishay General Semiconductor - Diodes Division
型号:
FESB16ATHE3_A/I
封装:
TO-263AB (D²PAK)
批次:
-
数据手册:
描述:
DIODE GEN PURP 50V 16A TO263AB
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Base Product Number | FESB16 |
| Capacitance @ Vr, F | 175pF @ 4V, 1MHz |
| Supplier Device Package | TO-263AB (D²PAK) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Current - Average Rectified (Io) | 16A |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 16 A |
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