FDU6N25
Fairchild Semiconductor
型号:
FDU6N25
封装:
I-PAK
批次:
-
数据手册:
-
描述:
POWER FIELD-EFFECT TRANSISTOR, 4
购买数量:
库存 : 8461
最小起订量: 1 最小递增量: 1
数量
单价
1211
0.2375
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产品信息
参数信息
用户指南
| Mfr | Fairchild Semiconductor |
| Series | UniFET™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.2A, 10V |
| Power Dissipation (Max) | 50W (Tc) |
| Supplier Device Package | I-PAK |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
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