FDFME2P823ZT

Fairchild Semiconductor

型号:

FDFME2P823ZT

品牌:

封装:

6-MicroFET (1.6x1.6)

批次:

数据手册:

描述:

2.6A, 20V, P-CHANNEL MOSFET

购买数量:

库存 : 40000

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Fairchild Semiconductor
Series	PowerTrench®
Package	Bulk
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	Schottky Diode (Isolated)
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Base Product Number	FDFME2
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	142mOhm @ 2.3A, 4.5V
Power Dissipation (Max)	1.4W (Ta)
Supplier Device Package	6-MicroFET (1.6x1.6)
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)