FA4F4M-T1B-A
Renesas Electronics America Inc
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产品信息
参数信息
用户指南
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Box |
| Power - Max | 200 mW |
| Product Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Base Product Number | FA4F4M |
| Resistor - Base (R1) | 22 Ohms |
| Resistor - Emitter Base (R2) | 22 Ohms |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µ, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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