EGF1THE3_A/I
Vishay General Semiconductor - Diodes Division
型号:
EGF1THE3_A/I
封装:
DO-214BA (GF1)
批次:
-
数据手册:
描述:
DIODE GEN PURP 1.3KV 1A DO214BA
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101, Superectifier® |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | DO-214BA |
| Product Status | Active |
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Supplier Device Package | DO-214BA (GF1) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 1300 V |
| Voltage - DC Reverse (Vr) (Max) | 1300 V |
| Current - Average Rectified (Io) | 1A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 3 V @ 1 A |
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