EGF1BHE3_A/H
Vishay General Semiconductor - Diodes Division
型号:
EGF1BHE3_A/H
封装:
DO-214BA (GF1)
批次:
-
数据手册:
描述:
DIODE GEN PURP 100V 1A DO214BA
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101, Superectifier® |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | DO-214BA |
| Product Status | Obsolete |
| Base Product Number | EGF1 |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Supplier Device Package | DO-214BA (GF1) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 1A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
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