CSD85312Q3E
Texas Instruments
型号:
CSD85312Q3E
封装:
8-VSON (3.3x3.3)
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 20V 39A 8VSON
购买数量:
库存 : 10951
最小起订量: 1 最小递增量: 1
数量
单价
1
1.1685
10
1.0469
100
0.816525
500
0.674538
1000
0.532522
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Texas Instruments |
| Series | NexFET™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate, 5V Drive |
| Power - Max | 2.5W |
| Configuration | 2 N-Channel (Dual) Common Source |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Base Product Number | CSD85312 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 10A, 8V |
| Supplier Device Package | 8-VSON (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
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