Texas Instruments
型号:
CSD25304W1015T
封装:
6-DSBGA (1x1.5)
批次:
-
数据手册:
-
描述:
MOSFET P-CH 20V 3A 6DSBGA
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.0545
10
0.86545
100
0.67298
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| Mfr | Texas Instruments |
| Series | NexFET™ |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFBGA, DSBGA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.15V @ 250µA |
| Base Product Number | CSD25304W1015 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 32.5mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 750mW (Ta) |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 595 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |