CSD25303W1015
Texas Instruments
型号:
CSD25303W1015
封装:
6-DSBGA (1x1.5)
批次:
-
数据手册:
描述:
MOSFET P-CH 20V 3A 6DSBGA
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Texas Instruments |
| Series | NexFET™ |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFBGA, DSBGA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Base Product Number | CSD2530 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
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