BTS115AE6327

Infineon Technologies

型号:

BTS115AE6327

封装:

PG-TO220-3-1

批次:

-

数据手册:

-

描述:

N-CHANNEL POWER MOSFET

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series TEMPFET®
Package Bulk
FET Type N-Channel
Vgs (Max) ±10V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max) 50W
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 50 V
Input Capacitance (Ciss) (Max) @ Vds 735 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)