BSZ150N10LS3GATMA1
Infineon Technologies
型号:
BSZ150N10LS3GATMA1
封装:
PG-TSDSON-8
批次:
-
数据手册:
-
描述:
MOSFET N-CH 100V 40A 8TSDSON
购买数量:
库存 : 1327
最小起订量: 1 最小递增量: 1
数量
单价
1
1.501
10
1.35185
100
1.08661
500
0.892791
1000
0.739736
2000
0.688731
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 33µA |
| Base Product Number | BSZ150 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 63W (Tc) |
| Supplier Device Package | PG-TSDSON-8 |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
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