BSZ105N04NSGATMA1
Infineon Technologies
型号:
BSZ105N04NSGATMA1
封装:
PG-TSDSON-8
批次:
-
数据手册:
描述:
MOSFET N-CH 40V 11A/40A 8TSDSON
购买数量:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 14µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 35W (Tc) |
| Supplier Device Package | PG-TSDSON-8 |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
