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BSZ100N03LSGATMA1

Infineon Technologies

型号:

BSZ100N03LSGATMA1

封装:

PG-TSDSON-8

批次:

-

数据手册:

-

描述:

MOSFET N-CH 30V 12A/40A 8TSDSON

购买数量:

库存 : 4406

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.741

  • 10

    0.64885

  • 100

    0.49742

  • 500

    0.393205

  • 1000

    0.314564

  • 2000

    0.285076

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.2V @ 250µA
Base Product Number BSZ100
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 30W (Tc)
Supplier Device Package PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc)