Infineon Technologies
型号:
BSZ100N03LSGATMA1
封装:
PG-TSDSON-8
批次:
-
数据手册:
-
描述:
MOSFET N-CH 30V 12A/40A 8TSDSON
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.741
10
0.64885
100
0.49742
500
0.393205
1000
0.314564
2000
0.285076
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Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Base Product Number | BSZ100 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
Power Dissipation (Max) | 2.1W (Ta), 30W (Tc) |
Supplier Device Package | PG-TSDSON-8 |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 40A (Tc) |