BSZ086P03NS3EGATMA1
Infineon Technologies
型号:
BSZ086P03NS3EGATMA1
封装:
PG-TSDSON-8
批次:
-
数据手册:
-
描述:
MOSFET P-CH 30V 13.5A/40A TSDSON
购买数量:
库存 : 1037
最小起订量: 1 最小递增量: 1
数量
单价
1
0.8835
10
0.779
100
0.596885
500
0.471884
1000
0.377502
2000
0.342114
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.1V @ 105µA |
| Base Product Number | BSZ086 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Supplier Device Package | PG-TSDSON-8 |
| Gate Charge (Qg) (Max) @ Vgs | 57.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4785 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 40A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
