Infineon Technologies
型号:
BSZ018NE2LSATMA1
封装:
PG-TSDSON-8-FL
批次:
-
数据手册:
-
描述:
MOSFET N-CH 25V 23A/40A TSDSON
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.653
10
1.48105
100
1.190255
500
0.97793
1000
0.810274
2000
0.754395
请发送询价,我们将立即回复。
Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Base Product Number | BSZ018 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 1.8mOhm @ 30A, 10V |
Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
Supplier Device Package | PG-TSDSON-8-FL |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
Drain to Source Voltage (Vdss) | 25 V |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 12 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 40A (Tc) |