BSP125H6327XTSA1

Infineon Technologies

型号:

BSP125H6327XTSA1

品牌:

封装:

PG-SOT223-4

批次:

数据手册:

描述:

MOSFET N-CH 600V 120MA SOT223-4

购买数量:

库存 : 32931

最小起订量: 1 最小递增量: 1

数量

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参数信息

用户指南

Mfr	Infineon Technologies
Series	SIPMOS®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 94µA
Base Product Number	BSP125
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	45Ohm @ 120mA, 10V
Power Dissipation (Max)	1.8W (Ta)
Supplier Device Package	PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	120mA (Ta)