BSO211P

Infineon Technologies

型号:

BSO211P

封装:

PG-DSO-8

批次:

-

数据手册:

-

描述:

P-CHANNEL POWER MOSFET

购买数量:

库存 : 20000

最小起订量: 1 最小递增量: 1

数量

单价

  • 944

    0.304

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 2W
Configuration 2 P-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Active
Vgs(th) (Max) @ Id 1.2V @ 25µA
Base Product Number BSO211
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V
Supplier Device Package PG-DSO-8
Gate Charge (Qg) (Max) @ Vgs 23.9nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.7A