BSM600D12P3G001
Rohm Semiconductor
型号:
BSM600D12P3G001
封装:
Module
批次:
-
数据手册:
-
描述:
1200V, 576A, HALF BRIDGE, FULL S
购买数量:
库存 : 1
最小起订量: 1 最小递增量: 1
数量
单价
1
1740.115
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Bulk |
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Power - Max | 2450W (Tc) |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.6V @ 182mA |
| Base Product Number | BSM600 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 31000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
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