BSM600C12P3G201
Rohm Semiconductor
型号:
BSM600C12P3G201
封装:
Module
批次:
-
数据手册:
-
描述:
SICFET N-CH 1200V 600A MODULE
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tray |
| FET Type | N-Channel |
| Vgs (Max) | +22V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.6V @ 182mA |
| Base Product Number | BSM600 |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | - |
| Power Dissipation (Max) | 2460W (Tc) |
| Supplier Device Package | Module |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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