BSM300C12P3E301

Rohm Semiconductor

型号:

BSM300C12P3E301

封装:

Module

批次:

-

数据手册:

-

描述:

SICFET N-CH 1200V 300A MODULE

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Rohm Semiconductor
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) +22V, -4V
Technology SiCFET (Silicon Carbide)
FET Feature Standard
Package / Case Module
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 80mA
Base Product Number BSM300
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 1360W (Tc)
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 300A (Tc)