Rohm Semiconductor
型号:
BSM120D12P2C005
封装:
Module
批次:
-
描述:
MOSFET 2N-CH 1200V 120A MODULE
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
375.459
10
364.1673
请发送询价,我们将立即回复。
Mfr | Rohm Semiconductor |
Series | - |
Package | Bulk |
Technology | Silicon Carbide (SiC) |
FET Feature | - |
Power - Max | 780W |
Configuration | 2 N-Channel (Half Bridge) |
Package / Case | Module |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.7V @ 22mA |
Base Product Number | BSM120 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | - |
Supplier Device Package | Module |
Gate Charge (Qg) (Max) @ Vgs | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |