BSDH10G65E2
Bourns Inc.
库存 : 2900
最小起订量: 1 最小递增量: 1
数量
单价
1
2.793
10
2.3484
100
1.89981
500
1.68872
1000
1.445966
2000
1.36153
5000
1.30625
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Bourns Inc. |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 323pF @ 1V, 1MHz |
| Supplier Device Package | TO-220-2 |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
