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BSC120N12LSGATMA1

Infineon Technologies

型号:

BSC120N12LSGATMA1

封装:

PG-TDSON-8

批次:

-

数据手册:

-

描述:

TRENCH >=100V PG-TDSON-8

购买数量:

库存 : 4994

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.843

  • 10

    1.53235

  • 100

    1.219515

  • 500

    1.031909

  • 1000

    0.875568

  • 2000

    0.831792

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 72µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 12mOhm @ 34A, 10V
Power Dissipation (Max) 114W (Tc)
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 68A (Tc)