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BSC110N06NS3GATMA1

Infineon Technologies

型号:

BSC110N06NS3GATMA1

封装:

PG-TDSON-8-5

批次:

-

数据手册:

-

描述:

MOSFET N-CH 60V 50A TDSON-8

购买数量:

库存 : 1460

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.9595

  • 10

    0.85975

  • 100

    0.670035

  • 500

    0.55347

  • 1000

    0.436952

  • 2000

    0.407826

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 23µA
Base Product Number BSC110
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Supplier Device Package PG-TDSON-8-5
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)