BSC0910NDIATMA1
Infineon Technologies
型号:
BSC0910NDIATMA1
封装:
PG-TISON-8
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 25V 16A/31A TISON8
购买数量:
库存 : 12616
最小起订量: 1 最小递增量: 1
数量
单价
1
2.337
10
2.1033
100
1.69081
500
1.389147
1000
1.151001
2000
1.071628
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Power - Max | 1W |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Base Product Number | BSC0910 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 25A, 10V |
| Supplier Device Package | PG-TISON-8 |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 11A, 31A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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