BSC026N02KSG

Infineon Technologies

型号:

BSC026N02KSG

品牌:

封装:

PG-TDSON-8-1

批次:

数据手册:

描述:

BSC026N02 - 12V-300V N-CHANNEL P

购买数量:

库存 : 27190

最小起订量: 1 最小递增量: 1

数量

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参数信息

用户指南

Mfr	Infineon Technologies
Series	OptiMOS™2
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 200µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2.6mOhm @ 50A, 4.5V
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Supplier Device Package	PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs	52.7 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	7800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	25A (Ta), 134A (Tc)