BSB280N15NZ3G
Infineon Technologies
型号:
BSB280N15NZ3G
封装:
MG-WDSON-2-5
批次:
-
数据手册:
-
描述:
BSB280N15 - 12V-300V N-CHANNEL P
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MX |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 30A, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Supplier Device Package | MG-WDSON-2-5 |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 30A (Tc) |
2000+日均询价数量
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2800+全球品牌
15,000 ㎡库存仓库
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