BSB165N15NZ3G
Infineon Technologies
型号:
BSB165N15NZ3G
封装:
MG-WDSON-2-9
批次:
-
数据手册:
-
描述:
BSB165N15 - 12V-300V N-CHANNEL P
购买数量:
库存 : 4012
最小起订量: 1 最小递增量: 1
数量
单价
156
1.824
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS® |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MZ |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 110µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 30A, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Supplier Device Package | MG-WDSON-2-9 |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 45A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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